TY - JOUR
T1 - Adjoint-based sensitivity analysis for the optimal crucible temperature profile in the RF-Heating TSSG-SiC crystal growth process
AU - Horiuchi, Takashi
AU - Wang, Lei
AU - Sekimoto, Atsushi
AU - Okano, Yasunori
AU - Ujihara, Toru
AU - Dost, Sadik
N1 - Funding Information:
This research partly used computational resources under Research Institute for Information Technology, Kyushu University and Collaborative Research Program for Young Women Scientists provided by Academic Center for Computing and Media Studies, Kyoto University . The research work was financially supported by Grant-in-Aid for Scientific Research (A) (JSPS KAKENHI Grant Number JP18H03839 ) from the Ministry of Education, 165 Culture, Sports, Science and Technology of Japan .
Funding Information:
This research partly used computational resources under Research Institute for Information Technology, Kyushu University and Collaborative Research Program for Young Women Scientists provided by Academic Center for Computing and Media Studies, Kyoto University. The research work was financially supported by Grant-in-Aid for Scientific Research (A) (JSPS KAKENHI Grant Number JP18H03839) from the Ministry of Education, 165 Culture, Sports, Science and Technology of Japan.
Publisher Copyright:
© 2019 Elsevier B.V.
PY - 2019/7/1
Y1 - 2019/7/1
N2 - Previous numerical simulations carried out for the TSSG process of SiC crystal have shown that the downward flow developing in the melt under the seed crystal induces radial growth rate non-uniformity. In order to minimize the adverse effect of this flow, an adjoint-based sensitivity analysis was performed and an optimal crucible temperature condition was determined. The analysis at the initial state showed that the middle region of the crucible sidewall is the most sensitive region for the optimization of the objective functional. At the optimized state, growth rate uniformity is significantly improved without any reduction in growth rate. Furthermore, this optimized state is stable within a range of crucible temperature perturbations.
AB - Previous numerical simulations carried out for the TSSG process of SiC crystal have shown that the downward flow developing in the melt under the seed crystal induces radial growth rate non-uniformity. In order to minimize the adverse effect of this flow, an adjoint-based sensitivity analysis was performed and an optimal crucible temperature condition was determined. The analysis at the initial state showed that the middle region of the crucible sidewall is the most sensitive region for the optimization of the objective functional. At the optimized state, growth rate uniformity is significantly improved without any reduction in growth rate. Furthermore, this optimized state is stable within a range of crucible temperature perturbations.
KW - A1. Computer simulation
KW - A1. Fluid flows
KW - A1. Heat transfer
KW - A1. Magnetic fields
KW - A1. Mass transfer
KW - A2. Top seeded solution growth
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U2 - 10.1016/j.jcrysgro.2019.04.001
DO - 10.1016/j.jcrysgro.2019.04.001
M3 - Article
AN - SCOPUS:85064450573
VL - 517
SP - 59
EP - 63
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
ER -