Adjoint-based sensitivity analysis for the optimal crucible temperature profile in the RF-Heating TSSG-SiC crystal growth process

Takashi Horiuchi, Lei Wang, Atsushi Sekimoto, Yasunori Okano, Toru Ujihara, Sadik Dost

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

Previous numerical simulations carried out for the TSSG process of SiC crystal have shown that the downward flow developing in the melt under the seed crystal induces radial growth rate non-uniformity. In order to minimize the adverse effect of this flow, an adjoint-based sensitivity analysis was performed and an optimal crucible temperature condition was determined. The analysis at the initial state showed that the middle region of the crucible sidewall is the most sensitive region for the optimization of the objective functional. At the optimized state, growth rate uniformity is significantly improved without any reduction in growth rate. Furthermore, this optimized state is stable within a range of crucible temperature perturbations.

Original languageEnglish
Pages (from-to)59-63
Number of pages5
JournalJournal of Crystal Growth
Volume517
DOIs
Publication statusPublished - Jul 1 2019
Externally publishedYes

Keywords

  • A1. Computer simulation
  • A1. Fluid flows
  • A1. Heat transfer
  • A1. Magnetic fields
  • A1. Mass transfer
  • A2. Top seeded solution growth

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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