A surface potential based organic thin-film transistor model for circuit simulation verified with DNTT high performance test devices

T. K. Maiti, T. Hayashi, L. Chen, Hiroki Mori, M. J. Kang, K. Takimiya, M. Miura-Mattausch, H. J. Mattausch

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

A compact surface potential based model for organic thin-film transistors (OTFTs), including both tail and deep trap states across the band gap, is reported. The model has been developed on the basis of a complete surface potential approach for undoped-body OTFTs. Accurate surface potentials are calculated by explicitly including the floating backside potential that varies with applied biases. A pseudo-2D resistor model is developed to capture the structural features of the OTFT. The resistor model considers, in particular, the effects originating from a bias dependent 2D current flow in the channel region and results in accurate reproduction of the electrical characteristics. The fitting capability of the developed OTFT model is verified against measured high-performance dinaphtho thieno thiophene (DNTT) based field-effect transistor data. Accurate reproduction of the current characteristics of the OTFT test structures is verified from a week to a strong inversion regime.

Original languageEnglish
Article number6732961
Pages (from-to)159-168
Number of pages10
JournalIEEE Transactions on Semiconductor Manufacturing
Volume27
Issue number2
DOIs
Publication statusPublished - 2014
Externally publishedYes

Fingerprint

Thiophenes
performance tests
Circuit simulation
Surface potential
Thiophene
Thin film transistors
thiophenes
transistors
thin films
simulation
resistors
Resistors
Field effect transistors
floating
Energy gap
field effect transistors
traps
inversions

Keywords

  • compact model
  • DNTT
  • Organic Thin-Film Transistors
  • SPICE
  • surface potential
  • traps

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Industrial and Manufacturing Engineering
  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

Cite this

A surface potential based organic thin-film transistor model for circuit simulation verified with DNTT high performance test devices. / Maiti, T. K.; Hayashi, T.; Chen, L.; Mori, Hiroki; Kang, M. J.; Takimiya, K.; Miura-Mattausch, M.; Mattausch, H. J.

In: IEEE Transactions on Semiconductor Manufacturing, Vol. 27, No. 2, 6732961, 2014, p. 159-168.

Research output: Contribution to journalArticle

Maiti, T. K. ; Hayashi, T. ; Chen, L. ; Mori, Hiroki ; Kang, M. J. ; Takimiya, K. ; Miura-Mattausch, M. ; Mattausch, H. J. / A surface potential based organic thin-film transistor model for circuit simulation verified with DNTT high performance test devices. In: IEEE Transactions on Semiconductor Manufacturing. 2014 ; Vol. 27, No. 2. pp. 159-168.
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