A surface potential based organic thin-film transistor model for circuit simulation verified with DNTT high performance test devices

T. K. Maiti, T. Hayashi, L. Chen, H. Mori, M. J. Kang, K. Takimiya, M. Miura-Mattausch, H. J. Mattausch

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

A compact surface potential based model for organic thin-film transistors (OTFTs), including both tail and deep trap states across the band gap, is reported. The model has been developed on the basis of a complete surface potential approach for undoped-body OTFTs. Accurate surface potentials are calculated by explicitly including the floating backside potential that varies with applied biases. A pseudo-2D resistor model is developed to capture the structural features of the OTFT. The resistor model considers, in particular, the effects originating from a bias dependent 2D current flow in the channel region and results in accurate reproduction of the electrical characteristics. The fitting capability of the developed OTFT model is verified against measured high-performance dinaphtho thieno thiophene (DNTT) based field-effect transistor data. Accurate reproduction of the current characteristics of the OTFT test structures is verified from a week to a strong inversion regime.

Original languageEnglish
Article number6732961
Pages (from-to)159-168
Number of pages10
JournalIEEE Transactions on Semiconductor Manufacturing
Volume27
Issue number2
DOIs
Publication statusPublished - May 2014
Externally publishedYes

Keywords

  • DNTT
  • Organic Thin-Film Transistors
  • SPICE
  • compact model
  • surface potential
  • traps

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

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