A proton pumping gate field-effect transistor for a hydrogen gas sensor

Keiji Tsukada, Tomiharu Yamaguchi, Toshihiko Kiwa

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

A proton pumping field-effect transistor (FET), consisting of a triple layer gate structure of a Pd/proton conducting polymer/Pt, has been developed. The hydrogen sensitivity was controlled by the bias change between Pt and Pd. Furthermore, two kinds of methods for the readout of DC and AC modulation can be achieved. According to the decrement of the bias frequency, the modulated output was increased. This characteristic realizes a gas sensor with a self-check function.

Original languageEnglish
Pages (from-to)1268-1269
Number of pages2
JournalIEEE Sensors Journal
Volume7
Issue number9
DOIs
Publication statusPublished - Sep 2007

Fingerprint

Gates (transistor)
Chemical sensors
Protons
pumping
field effect transistors
Hydrogen
protons
sensors
Conducting polymers
conducting polymers
hydrogen
Field effect transistors
gases
readout
alternating current
direct current
Modulation
modulation
output
sensitivity

Keywords

  • Field-effect transistor (FET)
  • Hydrogen gas sensor
  • Proton
  • Self check function

ASJC Scopus subject areas

  • Engineering(all)
  • Electrical and Electronic Engineering

Cite this

A proton pumping gate field-effect transistor for a hydrogen gas sensor. / Tsukada, Keiji; Yamaguchi, Tomiharu; Kiwa, Toshihiko.

In: IEEE Sensors Journal, Vol. 7, No. 9, 09.2007, p. 1268-1269.

Research output: Contribution to journalArticle

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