A photovoltaic cell from p-type boron-doped amorphous carbon film

X. M. Tian, M. Rusop, Y. Hayashi, T. Soga, T. Jimbo, M. Umeno

Research output: Contribution to journalArticlepeer-review

46 Citations (Scopus)

Abstract

Boron-doped amorphous carbon (a-C(B)) films were prepared on n-type silicon using pulsed laser deposition technique of a graphite target. The a-C(B) films have been proved to be p-type by the formation of a heterojunction between the a-C(B) film and n-Si. The device of a-C(B)/n-Si structure yielded an open-circuit voltage (Voc) of 0.27V and a short-circuit current density (Jsc) of 2.2mA/cm2 under illumination (AM1.5 100mW/cm2). According to calculation, the energy conversion efficiency and fill factor were found to be about 0.3% and 0.53, respectively.

Original languageEnglish
Pages (from-to)105-112
Number of pages8
JournalSolar Energy Materials and Solar Cells
Volume77
Issue number1
DOIs
Publication statusPublished - Apr 30 2003
Externally publishedYes

Keywords

  • Amorphous
  • Boron-doped
  • Heterojunction
  • Photovoltaic

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films

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