A photovoltaic cell from p-type boron-doped amorphous carbon film

X. M. Tian; M. Rusop; Y. Hayashi; T. Soga; T. Jimbo; M. Umeno

doi:10.1016/S0927-0248(02)00461-0

A photovoltaic cell from p-type boron-doped amorphous carbon film

X. M. Tian, M. Rusop, Y. Hayashi, T. Soga, T. Jimbo, M. Umeno

Research output: Contribution to journal › Article › peer-review

46 Citations (Scopus)

Abstract

Boron-doped amorphous carbon (a-C(B)) films were prepared on n-type silicon using pulsed laser deposition technique of a graphite target. The a-C(B) films have been proved to be p-type by the formation of a heterojunction between the a-C(B) film and n-Si. The device of a-C(B)/n-Si structure yielded an open-circuit voltage (V_oc) of 0.27V and a short-circuit current density (J_sc) of 2.2mA/cm² under illumination (AM1.5 100mW/cm²). According to calculation, the energy conversion efficiency and fill factor were found to be about 0.3% and 0.53, respectively.

Original language	English
Pages (from-to)	105-112
Number of pages	8
Journal	Solar Energy Materials and Solar Cells
Volume	77
Issue number	1
DOIs	https://doi.org/10.1016/S0927-0248(02)00461-0
Publication status	Published - Apr 30 2003
Externally published	Yes

Keywords

Amorphous
Boron-doped
Heterojunction
Photovoltaic

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Renewable Energy, Sustainability and the Environment
Surfaces, Coatings and Films

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Cite this

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abstract = "Boron-doped amorphous carbon (a-C(B)) films were prepared on n-type silicon using pulsed laser deposition technique of a graphite target. The a-C(B) films have been proved to be p-type by the formation of a heterojunction between the a-C(B) film and n-Si. The device of a-C(B)/n-Si structure yielded an open-circuit voltage (Voc) of 0.27V and a short-circuit current density (Jsc) of 2.2mA/cm2 under illumination (AM1.5 100mW/cm2). According to calculation, the energy conversion efficiency and fill factor were found to be about 0.3% and 0.53, respectively.",

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T1 - A photovoltaic cell from p-type boron-doped amorphous carbon film

AU - Tian, X. M.

AU - Rusop, M.

AU - Hayashi, Y.

AU - Soga, T.

AU - Jimbo, T.

AU - Umeno, M.

PY - 2003/4/30

Y1 - 2003/4/30

N2 - Boron-doped amorphous carbon (a-C(B)) films were prepared on n-type silicon using pulsed laser deposition technique of a graphite target. The a-C(B) films have been proved to be p-type by the formation of a heterojunction between the a-C(B) film and n-Si. The device of a-C(B)/n-Si structure yielded an open-circuit voltage (Voc) of 0.27V and a short-circuit current density (Jsc) of 2.2mA/cm2 under illumination (AM1.5 100mW/cm2). According to calculation, the energy conversion efficiency and fill factor were found to be about 0.3% and 0.53, respectively.

AB - Boron-doped amorphous carbon (a-C(B)) films were prepared on n-type silicon using pulsed laser deposition technique of a graphite target. The a-C(B) films have been proved to be p-type by the formation of a heterojunction between the a-C(B) film and n-Si. The device of a-C(B)/n-Si structure yielded an open-circuit voltage (Voc) of 0.27V and a short-circuit current density (Jsc) of 2.2mA/cm2 under illumination (AM1.5 100mW/cm2). According to calculation, the energy conversion efficiency and fill factor were found to be about 0.3% and 0.53, respectively.

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KW - Heterojunction

KW - Photovoltaic

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