A photovoltaic cell from p-type boron-doped amorphous carbon film

X. M. Tian; M. Rusop; Y. Hayashi; T. Soga; T. Jimbo; M. Umeno

doi:10.1016/S0927-0248(02)00461-0

A photovoltaic cell from p-type boron-doped amorphous carbon film

X. M. Tian, M. Rusop, Y. Hayashi, T. Soga, T. Jimbo, M. Umeno

Research output: Contribution to journal › Article › peer-review

46 Citations (Scopus)

Abstract

Boron-doped amorphous carbon (a-C(B)) films were prepared on n-type silicon using pulsed laser deposition technique of a graphite target. The a-C(B) films have been proved to be p-type by the formation of a heterojunction between the a-C(B) film and n-Si. The device of a-C(B)/n-Si structure yielded an open-circuit voltage (V_oc) of 0.27V and a short-circuit current density (J_sc) of 2.2mA/cm² under illumination (AM1.5 100mW/cm²). According to calculation, the energy conversion efficiency and fill factor were found to be about 0.3% and 0.53, respectively.

Original language	English
Pages (from-to)	105-112
Number of pages	8
Journal	Solar Energy Materials and Solar Cells
Volume	77
Issue number	1
DOIs	https://doi.org/10.1016/S0927-0248(02)00461-0
Publication status	Published - Apr 30 2003
Externally published	Yes

Keywords

Amorphous
Boron-doped
Heterojunction
Photovoltaic

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Renewable Energy, Sustainability and the Environment
Surfaces, Coatings and Films

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1016/S0927-0248(02)00461-0

Cite this

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title = "A photovoltaic cell from p-type boron-doped amorphous carbon film",

abstract = "Boron-doped amorphous carbon (a-C(B)) films were prepared on n-type silicon using pulsed laser deposition technique of a graphite target. The a-C(B) films have been proved to be p-type by the formation of a heterojunction between the a-C(B) film and n-Si. The device of a-C(B)/n-Si structure yielded an open-circuit voltage (Voc) of 0.27V and a short-circuit current density (Jsc) of 2.2mA/cm2 under illumination (AM1.5 100mW/cm2). According to calculation, the energy conversion efficiency and fill factor were found to be about 0.3% and 0.53, respectively.",

keywords = "Amorphous, Boron-doped, Heterojunction, Photovoltaic",

author = "Tian, {X. M.} and M. Rusop and Y. Hayashi and T. Soga and T. Jimbo and M. Umeno",

note = "Funding Information: This work was supported by the Japan Society for Promotion of Science under the program “Research for the Future”. Copyright: Copyright 2004 Elsevier Science B.V., Amsterdam. All rights reserved.",

year = "2003",

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doi = "10.1016/S0927-0248(02)00461-0",

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T1 - A photovoltaic cell from p-type boron-doped amorphous carbon film

AU - Tian, X. M.

AU - Rusop, M.

AU - Hayashi, Y.

AU - Soga, T.

AU - Jimbo, T.

AU - Umeno, M.

N1 - Funding Information: This work was supported by the Japan Society for Promotion of Science under the program “Research for the Future”. Copyright: Copyright 2004 Elsevier Science B.V., Amsterdam. All rights reserved.

PY - 2003/4/30

Y1 - 2003/4/30

N2 - Boron-doped amorphous carbon (a-C(B)) films were prepared on n-type silicon using pulsed laser deposition technique of a graphite target. The a-C(B) films have been proved to be p-type by the formation of a heterojunction between the a-C(B) film and n-Si. The device of a-C(B)/n-Si structure yielded an open-circuit voltage (Voc) of 0.27V and a short-circuit current density (Jsc) of 2.2mA/cm2 under illumination (AM1.5 100mW/cm2). According to calculation, the energy conversion efficiency and fill factor were found to be about 0.3% and 0.53, respectively.

AB - Boron-doped amorphous carbon (a-C(B)) films were prepared on n-type silicon using pulsed laser deposition technique of a graphite target. The a-C(B) films have been proved to be p-type by the formation of a heterojunction between the a-C(B) film and n-Si. The device of a-C(B)/n-Si structure yielded an open-circuit voltage (Voc) of 0.27V and a short-circuit current density (Jsc) of 2.2mA/cm2 under illumination (AM1.5 100mW/cm2). According to calculation, the energy conversion efficiency and fill factor were found to be about 0.3% and 0.53, respectively.

KW - Amorphous

KW - Boron-doped

KW - Heterojunction

KW - Photovoltaic

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DO - 10.1016/S0927-0248(02)00461-0

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VL - 77

SP - 105

EP - 112

JO - Solar Cells

JF - Solar Cells

SN - 0927-0248

IS - 1

ER -

A photovoltaic cell from p-type boron-doped amorphous carbon film

Abstract

Keywords

ASJC Scopus subject areas

UN SDGs

Access to Document

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