Boron-doped amorphous carbon (a-C(B)) films were prepared on n-type silicon using pulsed laser deposition technique of a graphite target. The a-C(B) films have been proved to be p-type by the formation of a heterojunction between the a-C(B) film and n-Si. The device of a-C(B)/n-Si structure yielded an open-circuit voltage (Voc) of 0.27V and a short-circuit current density (Jsc) of 2.2mA/cm2 under illumination (AM1.5 100mW/cm2). According to calculation, the energy conversion efficiency and fill factor were found to be about 0.3% and 0.53, respectively.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Renewable Energy, Sustainability and the Environment
- Surfaces, Coatings and Films