A new highly conductive BO-(MeO)2TCNQ Langmuir-Blodgett film

K. Ogasawara, T. Ishiguro, S. Horiuchi, H. Yamochi, G. Saito, Y. Nogami

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

A stable, highly conductive Langmuir-Blodgett (LB) film was developed with a charge-transfer (CT) complex of bisethylenedioxytetrathiafulvalene (BO) and dimethoxytetracyanoquinodimethane using the unique nature of BO molecules. The metallic temperature dependence of electrical conductivity was observed down to 180 K, showing a maximum of 13 S/cm. The X-ray diffraction measurements show the presence of three kinds of domains corresponding to CT complex, icosanoic acid and disordered CT complex regions. The behavior of macroscopic electrical conductivity is understood well by apercolation model consisting of metallic, semiconducting and insulating sites.

Original languageEnglish
Pages (from-to)1835-1836
Number of pages2
JournalSynthetic Metals
Volume86
Issue number1-3
DOIs
Publication statusPublished - Feb 28 1997

Keywords

  • Diffraction and scattering
  • Langmuir-Blodgett technique
  • Metal-insulator phase transitions
  • Metallic films
  • X-ray emission

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering
  • Metals and Alloys
  • Materials Chemistry

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    Ogasawara, K., Ishiguro, T., Horiuchi, S., Yamochi, H., Saito, G., & Nogami, Y. (1997). A new highly conductive BO-(MeO)2TCNQ Langmuir-Blodgett film. Synthetic Metals, 86(1-3), 1835-1836. https://doi.org/10.1016/s0379-6779(97)80927-7