A low dark current stacked CMOS-APS for charged particle imaging

Isao Takayanagi, Junichi Nakamura, El Sayed Eid, Eric R. Fossum, Kazuhide Nagashima, Takuya Kunihiro, Hisayoshi Yurimoto

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

A stacked CMOS-active pixel sensor (APS) with a newly devised pixel structure for charged particle detection has been developed. A twin well pixel with a p-MOS readout transistor achieves low leakage current caused by a hot carrier effect at low temperature as low as 5×10-8 V/s at the pixel electrode. The total read noise floor of 0.1mVrms was obtained by non-destructive readout CDS with the CDS interval of 21 seconds.

Original languageEnglish
Title of host publicationTechnical Digest - International Electron Devices Meeting
Pages551-554
Number of pages4
Publication statusPublished - 2001
Externally publishedYes
EventIEEE International Electron Devices Meeting IEDM 2001 - Washington, DC, United States
Duration: Dec 2 2001Dec 5 2001

Other

OtherIEEE International Electron Devices Meeting IEDM 2001
CountryUnited States
CityWashington, DC
Period12/2/0112/5/01

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ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Takayanagi, I., Nakamura, J., Eid, E. S., Fossum, E. R., Nagashima, K., Kunihiro, T., & Yurimoto, H. (2001). A low dark current stacked CMOS-APS for charged particle imaging. In Technical Digest - International Electron Devices Meeting (pp. 551-554)