A low dark current stacked CMOS-APS for charged particle imaging

Isao Takayanagi, Junichi Nakamura, El Sayed Eid, Eric R. Fossum, Kazuhide Nagashima, Takuya Kunihiro, Hisayoshi Yurimoto

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

A stacked CMOS-active pixel sensor (APS) with a newly devised pixel structure for charged particle detection has been developed. A twin well pixel with a p-MOS readout transistor achieves low leakage current caused by a hot carrier effect at low temperature as low as 5×10-8 V/s at the pixel electrode. The total read noise floor of 0.1mVrms was obtained by non-destructive readout CDS with the CDS interval of 21 seconds.

Original languageEnglish
Pages (from-to)551-554
Number of pages4
JournalTechnical Digest-International Electron Devices Meeting
DOIs
Publication statusPublished - Jan 1 2001
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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