Recently, optically reconfigurable gate arrays (ORGAs), which can support a high-speed dynamic reconfiguration with numerous reconfiguration contexts, have been developed. Although an ORGA is a three-dimensional VLSI, no through-silicon via (TSV) technology or any micro-bump technology is never necessary to produce an ORGA. A three-dimensional ORGA uses only free-optical connections and a volume-type holographic memory technology. Therefore, the yield ratio of ORGAs is so high that ORGAs can easily be produced with no concern related to production variation. In this study, to increase the gate density, a short wavelength laser of 404 nm is applied to ORGA architecture. This paper presents the reconfiguration capabilities of the reconfiguration period and retention time of the photodiode memory architecture of a newly fabricated ORGA-VLSI.