This paper presents a compact, low-phase-noise and low-power D-band VCO with the tuning range from 140.1 to 143.5 GHz. To improve the area and power efficiency, we avoid using signal amplification and matching circuits in the VCO, where a 70GHz LC oscillator is directly coupled to a frequency doubler. The layout of the transistors is optimized so that the signal loss and reflection are minimized. The proposed VCO fabricated in a 65 nm CMOS technology occupies the core area of 0.05mm2. It achieves the output power of -8 dBm and the phase noise of -108.2 dBc/Hz at 10MHz offset with the power consumption of 24mW from 1V supply, which leads to the figure-of-merit (FoM) of -177.4 dBc/Hz.
- Frequency doubler
- Millimeterwave silicon rfics
- Voltage-controlled oscillator (VCO)
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering