52GHz bandwidth monolithically integrated WGPD/HEMT photoreceiver with large O/E conversion factor of 105V/W

K. Takahata, Y. Muramoto, Hideki Fukano, Y. Matsuoka

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

A long-wavelength monolithic photoreceiver has been fabricated using a multimode waveguide pin photodiode and an HEMT loss-compensated distributed amplifier. It provides an O/E conversion factor of 105V/W and a 3dB-down bandwidth of 52GHz, which is the largest bandwidth for any integrated photoreceiver reported to date.

Original languageEnglish
Pages (from-to)1639-1640
Number of pages2
JournalElectronics Letters
Volume35
Issue number19
DOIs
Publication statusPublished - Sep 16 1999
Externally publishedYes

Fingerprint

High electron mobility transistors
Bandwidth
Photodiodes
Waveguides
Wavelength

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

52GHz bandwidth monolithically integrated WGPD/HEMT photoreceiver with large O/E conversion factor of 105V/W. / Takahata, K.; Muramoto, Y.; Fukano, Hideki; Matsuoka, Y.

In: Electronics Letters, Vol. 35, No. 19, 16.09.1999, p. 1639-1640.

Research output: Contribution to journalArticle

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