5-nm-Order electron-beam lithography for nanodevice fabrication

Kenji Yamazaki, Hideo Namatsu

Research output: Contribution to journalArticle

40 Citations (Scopus)

Abstract

We have developed 5-nm-order electron-beam (EB) lithography with good uniformity within a large main deflection field. The keys are a new electron optics system and a high-resolution resist (hydrogen silsesquioxane). Owing to the high resolution and good uniformity of the EB, the lithography can produce patterns with a minimum linewidth of 5 nm at the center and corners of the 500-μm-square main deflection field. Moreover, we accurately measured the beam diameter using a Si knife edge with Ta visors and thresholds of 50-90%. The measurement results agree well with the lithography results when the effect of secondary electrons is taken into consideration. These results demonstrate that high-precision 5-nm-order lithography has been established.

Original languageEnglish
Pages (from-to)3767-3771
Number of pages5
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume43
Issue number6 B
DOIs
Publication statusPublished - Jun 2004
Externally publishedYes

Fingerprint

Electron beam lithography
Lithography
lithography
electron beams
Fabrication
fabrication
Electron optics
deflection
visors
electron optics
Linewidth
Electron beams
high resolution
Hydrogen
Electrons
thresholds
hydrogen
electrons

Keywords

  • Electron beam nanolithography
  • Hydrogen
  • Knife edge
  • Monte Carlo simulation
  • Secondary electron
  • Silsesquioxane

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

5-nm-Order electron-beam lithography for nanodevice fabrication. / Yamazaki, Kenji; Namatsu, Hideo.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 43, No. 6 B, 06.2004, p. 3767-3771.

Research output: Contribution to journalArticle

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