Abstract
We have developed 5-nm-order electron-beam (EB) lithography with good uniformity within a large main deflection field. The keys are a new electron optics system and a high-resolution resist (hydrogen silsesquioxane). Owing to the high resolution and good uniformity of the EB, the lithography can produce patterns with a minimum linewidth of 5 nm at the center and corners of the 500-μm-square main deflection field. Moreover, we accurately measured the beam diameter using a Si knife edge with Ta visors and thresholds of 50-90%. The measurement results agree well with the lithography results when the effect of secondary electrons is taken into consideration. These results demonstrate that high-precision 5-nm-order lithography has been established.
Original language | English |
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Pages (from-to) | 3767-3771 |
Number of pages | 5 |
Journal | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
Volume | 43 |
Issue number | 6 B |
DOIs | |
Publication status | Published - Jun 1 2004 |
Keywords
- Electron beam nanolithography
- Hydrogen
- Knife edge
- Monte Carlo simulation
- Secondary electron
- Silsesquioxane
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)