Abstract
We have developed 5-nm-order electron-beam (EB) lithography with good uniformity within a large main deflection field. The keys are a new electron optics system and a high-resolution resist (hydrogen silsesquioxane). Owing to the high resolution and good uniformity of the EB, the lithography can produce patterns with a minimum linewidth of 5 nm at the center and corners of the 500-μm-square main deflection field. Moreover, we accurately measured the beam diameter using a Si knife edge with Ta visors and thresholds of 50-90%. The measurement results agree well with the lithography results when the effect of secondary electrons is taken into consideration. These results demonstrate that high-precision 5-nm-order lithography has been established.
| Original language | English |
|---|---|
| Pages (from-to) | 3767-3771 |
| Number of pages | 5 |
| Journal | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
| Volume | 43 |
| Issue number | 6 B |
| DOIs | |
| Publication status | Published - Jun 2004 |
| Externally published | Yes |
Fingerprint
Keywords
- Electron beam nanolithography
- Hydrogen
- Knife edge
- Monte Carlo simulation
- Secondary electron
- Silsesquioxane
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
Cite this
5-nm-Order electron-beam lithography for nanodevice fabrication. / Yamazaki, Kenji; Namatsu, Hideo.
In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 43, No. 6 B, 06.2004, p. 3767-3771.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - 5-nm-Order electron-beam lithography for nanodevice fabrication
AU - Yamazaki, Kenji
AU - Namatsu, Hideo
PY - 2004/6
Y1 - 2004/6
N2 - We have developed 5-nm-order electron-beam (EB) lithography with good uniformity within a large main deflection field. The keys are a new electron optics system and a high-resolution resist (hydrogen silsesquioxane). Owing to the high resolution and good uniformity of the EB, the lithography can produce patterns with a minimum linewidth of 5 nm at the center and corners of the 500-μm-square main deflection field. Moreover, we accurately measured the beam diameter using a Si knife edge with Ta visors and thresholds of 50-90%. The measurement results agree well with the lithography results when the effect of secondary electrons is taken into consideration. These results demonstrate that high-precision 5-nm-order lithography has been established.
AB - We have developed 5-nm-order electron-beam (EB) lithography with good uniformity within a large main deflection field. The keys are a new electron optics system and a high-resolution resist (hydrogen silsesquioxane). Owing to the high resolution and good uniformity of the EB, the lithography can produce patterns with a minimum linewidth of 5 nm at the center and corners of the 500-μm-square main deflection field. Moreover, we accurately measured the beam diameter using a Si knife edge with Ta visors and thresholds of 50-90%. The measurement results agree well with the lithography results when the effect of secondary electrons is taken into consideration. These results demonstrate that high-precision 5-nm-order lithography has been established.
KW - Electron beam nanolithography
KW - Hydrogen
KW - Knife edge
KW - Monte Carlo simulation
KW - Secondary electron
KW - Silsesquioxane
UR - http://www.scopus.com/inward/record.url?scp=4444262931&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=4444262931&partnerID=8YFLogxK
U2 - 10.1143/JJAP.43.3767
DO - 10.1143/JJAP.43.3767
M3 - Article
AN - SCOPUS:4444262931
VL - 43
SP - 3767
EP - 3771
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 6 B
ER -