Abstract
A large bandwidth monolithically integrated photoreceiver for 1.55-μm wavelength operation was fabricated using a stacked structure of waveguide p-i-n photodiode layers and InAlAs-InGaAs high-electron mobility transistor (HEMT) layers grown using a single-step metal-organic vapor-phase epitaxy. The monolithic receiver optoelectronic integrated circuit (OEIC) consists of a waveguide p-i-n photodiode with a high responsivity of 0.5 A/W and a HEMT distributed amplifier. It has a bandwidth of 46.5 GHz, which is the largest yet reported for a long-wavelength receiver OEIC, and exhibits a clear eye opening at 40 Gb/s. This excellent performance is very attractive for use in high-speed optical transmission systems and millimeter-wave fiber-radio systems.
| Original language | English |
|---|---|
| Pages (from-to) | 1150-1152 |
| Number of pages | 3 |
| Journal | IEEE Photonics Technology Letters |
| Volume | 10 |
| Issue number | 8 |
| DOIs | |
| Publication status | Published - Aug 1998 |
| Externally published | Yes |
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Keywords
- Distributed amplifiers
- High-speed circuits/devices
- MODFET's
- Monolithic integrated circuits
- Optical receivers
- Optoelectronic devices
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Atomic and Molecular Physics, and Optics
- Physics and Astronomy (miscellaneous)
Cite this
46.5-GHz-bandwidth monolithic receiver OEIC consisting of a waveguide p-i-n photodiode and a HEMT distributed amplifier. / Takahata, K.; Muramoto, Y.; Fukano, Hideki; Kato, K.; Kozen, A.; Nakajima, O.; Matsuoka, Y.
In: IEEE Photonics Technology Letters, Vol. 10, No. 8, 08.1998, p. 1150-1152.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - 46.5-GHz-bandwidth monolithic receiver OEIC consisting of a waveguide p-i-n photodiode and a HEMT distributed amplifier
AU - Takahata, K.
AU - Muramoto, Y.
AU - Fukano, Hideki
AU - Kato, K.
AU - Kozen, A.
AU - Nakajima, O.
AU - Matsuoka, Y.
PY - 1998/8
Y1 - 1998/8
N2 - A large bandwidth monolithically integrated photoreceiver for 1.55-μm wavelength operation was fabricated using a stacked structure of waveguide p-i-n photodiode layers and InAlAs-InGaAs high-electron mobility transistor (HEMT) layers grown using a single-step metal-organic vapor-phase epitaxy. The monolithic receiver optoelectronic integrated circuit (OEIC) consists of a waveguide p-i-n photodiode with a high responsivity of 0.5 A/W and a HEMT distributed amplifier. It has a bandwidth of 46.5 GHz, which is the largest yet reported for a long-wavelength receiver OEIC, and exhibits a clear eye opening at 40 Gb/s. This excellent performance is very attractive for use in high-speed optical transmission systems and millimeter-wave fiber-radio systems.
AB - A large bandwidth monolithically integrated photoreceiver for 1.55-μm wavelength operation was fabricated using a stacked structure of waveguide p-i-n photodiode layers and InAlAs-InGaAs high-electron mobility transistor (HEMT) layers grown using a single-step metal-organic vapor-phase epitaxy. The monolithic receiver optoelectronic integrated circuit (OEIC) consists of a waveguide p-i-n photodiode with a high responsivity of 0.5 A/W and a HEMT distributed amplifier. It has a bandwidth of 46.5 GHz, which is the largest yet reported for a long-wavelength receiver OEIC, and exhibits a clear eye opening at 40 Gb/s. This excellent performance is very attractive for use in high-speed optical transmission systems and millimeter-wave fiber-radio systems.
KW - Distributed amplifiers
KW - High-speed circuits/devices
KW - MODFET's
KW - Monolithic integrated circuits
KW - Optical receivers
KW - Optoelectronic devices
UR - http://www.scopus.com/inward/record.url?scp=0032138888&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0032138888&partnerID=8YFLogxK
U2 - 10.1109/68.701532
DO - 10.1109/68.701532
M3 - Article
AN - SCOPUS:0032138888
VL - 10
SP - 1150
EP - 1152
JO - IEEE Photonics Technology Letters
JF - IEEE Photonics Technology Letters
SN - 1041-1135
IS - 8
ER -