Abstract
A large bandwidth monolithically integrated photoreceiver for 1.55-μm wavelength operation was fabricated using a stacked structure of waveguide p-i-n photodiode layers and InAlAs-InGaAs high-electron mobility transistor (HEMT) layers grown using a single-step metal-organic vapor-phase epitaxy. The monolithic receiver optoelectronic integrated circuit (OEIC) consists of a waveguide p-i-n photodiode with a high responsivity of 0.5 A/W and a HEMT distributed amplifier. It has a bandwidth of 46.5 GHz, which is the largest yet reported for a long-wavelength receiver OEIC, and exhibits a clear eye opening at 40 Gb/s. This excellent performance is very attractive for use in high-speed optical transmission systems and millimeter-wave fiber-radio systems.
| Original language | English |
|---|---|
| Pages (from-to) | 1150-1152 |
| Number of pages | 3 |
| Journal | IEEE Photonics Technology Letters |
| Volume | 10 |
| Issue number | 8 |
| DOIs | |
| Publication status | Published - Aug 1998 |
| Externally published | Yes |
Keywords
- Distributed amplifiers
- High-speed circuits/devices
- MODFET's
- Monolithic integrated circuits
- Optical receivers
- Optoelectronic devices
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering