46.5-GHz-bandwidth monolithic receiver OEIC consisting of a waveguide p-i-n photodiode and a HEMT distributed amplifier

K. Takahata; Y. Muramoto; H. Fukano; K. Kato; A. Kozen; O. Nakajima; Y. Matsuoka

doi:10.1109/68.701532

46.5-GHz-bandwidth monolithic receiver OEIC consisting of a waveguide p-i-n photodiode and a HEMT distributed amplifier

K. Takahata, Y. Muramoto, H. Fukano, K. Kato, A. Kozen, O. Nakajima, Y. Matsuoka

Research output: Contribution to journal › Article › peer-review

18 Citations (Scopus)

Abstract

A large bandwidth monolithically integrated photoreceiver for 1.55-μm wavelength operation was fabricated using a stacked structure of waveguide p-i-n photodiode layers and InAlAs-InGaAs high-electron mobility transistor (HEMT) layers grown using a single-step metal-organic vapor-phase epitaxy. The monolithic receiver optoelectronic integrated circuit (OEIC) consists of a waveguide p-i-n photodiode with a high responsivity of 0.5 A/W and a HEMT distributed amplifier. It has a bandwidth of 46.5 GHz, which is the largest yet reported for a long-wavelength receiver OEIC, and exhibits a clear eye opening at 40 Gb/s. This excellent performance is very attractive for use in high-speed optical transmission systems and millimeter-wave fiber-radio systems.

Original language	English
Pages (from-to)	1150-1152
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	10
Issue number	8
DOIs	https://doi.org/10.1109/68.701532
Publication status	Published - Aug 1998
Externally published	Yes

Keywords

Distributed amplifiers
High-speed circuits/devices
MODFET's
Monolithic integrated circuits
Optical receivers
Optoelectronic devices

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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10.1109/68.701532

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title = "46.5-GHz-bandwidth monolithic receiver OEIC consisting of a waveguide p-i-n photodiode and a HEMT distributed amplifier",

abstract = "A large bandwidth monolithically integrated photoreceiver for 1.55-μm wavelength operation was fabricated using a stacked structure of waveguide p-i-n photodiode layers and InAlAs-InGaAs high-electron mobility transistor (HEMT) layers grown using a single-step metal-organic vapor-phase epitaxy. The monolithic receiver optoelectronic integrated circuit (OEIC) consists of a waveguide p-i-n photodiode with a high responsivity of 0.5 A/W and a HEMT distributed amplifier. It has a bandwidth of 46.5 GHz, which is the largest yet reported for a long-wavelength receiver OEIC, and exhibits a clear eye opening at 40 Gb/s. This excellent performance is very attractive for use in high-speed optical transmission systems and millimeter-wave fiber-radio systems.",

keywords = "Distributed amplifiers, High-speed circuits/devices, MODFET's, Monolithic integrated circuits, Optical receivers, Optoelectronic devices",

author = "K. Takahata and Y. Muramoto and H. Fukano and K. Kato and A. Kozen and O. Nakajima and Y. Matsuoka",

year = "1998",

month = aug,

doi = "10.1109/68.701532",

language = "English",

volume = "10",

pages = "1150--1152",

journal = "IEEE Photonics Technology Letters",

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T1 - 46.5-GHz-bandwidth monolithic receiver OEIC consisting of a waveguide p-i-n photodiode and a HEMT distributed amplifier

AU - Takahata, K.

AU - Muramoto, Y.

AU - Fukano, H.

AU - Kato, K.

AU - Kozen, A.

AU - Nakajima, O.

AU - Matsuoka, Y.

PY - 1998/8

Y1 - 1998/8

N2 - A large bandwidth monolithically integrated photoreceiver for 1.55-μm wavelength operation was fabricated using a stacked structure of waveguide p-i-n photodiode layers and InAlAs-InGaAs high-electron mobility transistor (HEMT) layers grown using a single-step metal-organic vapor-phase epitaxy. The monolithic receiver optoelectronic integrated circuit (OEIC) consists of a waveguide p-i-n photodiode with a high responsivity of 0.5 A/W and a HEMT distributed amplifier. It has a bandwidth of 46.5 GHz, which is the largest yet reported for a long-wavelength receiver OEIC, and exhibits a clear eye opening at 40 Gb/s. This excellent performance is very attractive for use in high-speed optical transmission systems and millimeter-wave fiber-radio systems.

AB - A large bandwidth monolithically integrated photoreceiver for 1.55-μm wavelength operation was fabricated using a stacked structure of waveguide p-i-n photodiode layers and InAlAs-InGaAs high-electron mobility transistor (HEMT) layers grown using a single-step metal-organic vapor-phase epitaxy. The monolithic receiver optoelectronic integrated circuit (OEIC) consists of a waveguide p-i-n photodiode with a high responsivity of 0.5 A/W and a HEMT distributed amplifier. It has a bandwidth of 46.5 GHz, which is the largest yet reported for a long-wavelength receiver OEIC, and exhibits a clear eye opening at 40 Gb/s. This excellent performance is very attractive for use in high-speed optical transmission systems and millimeter-wave fiber-radio systems.

KW - Distributed amplifiers

KW - High-speed circuits/devices

KW - MODFET's

KW - Monolithic integrated circuits

KW - Optical receivers

KW - Optoelectronic devices

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JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

SN - 1041-1135

IS - 8

ER -

46.5-GHz-bandwidth monolithic receiver OEIC consisting of a waveguide p-i-n photodiode and a HEMT distributed amplifier

Abstract

Keywords

ASJC Scopus subject areas

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