46.5-GHz-bandwidth monolithic receiver OEIC consisting of a waveguide p-i-n photodiode and a HEMT distributed amplifier

K. Takahata, Y. Muramoto, Hideki Fukano, K. Kato, A. Kozen, O. Nakajima, Y. Matsuoka

Research output: Contribution to journalArticle

17 Citations (Scopus)


A large bandwidth monolithically integrated photoreceiver for 1.55-μm wavelength operation was fabricated using a stacked structure of waveguide p-i-n photodiode layers and InAlAs-InGaAs high-electron mobility transistor (HEMT) layers grown using a single-step metal-organic vapor-phase epitaxy. The monolithic receiver optoelectronic integrated circuit (OEIC) consists of a waveguide p-i-n photodiode with a high responsivity of 0.5 A/W and a HEMT distributed amplifier. It has a bandwidth of 46.5 GHz, which is the largest yet reported for a long-wavelength receiver OEIC, and exhibits a clear eye opening at 40 Gb/s. This excellent performance is very attractive for use in high-speed optical transmission systems and millimeter-wave fiber-radio systems.

Original languageEnglish
Pages (from-to)1150-1152
Number of pages3
JournalIEEE Photonics Technology Letters
Issue number8
Publication statusPublished - Aug 1998
Externally publishedYes



  • Distributed amplifiers
  • High-speed circuits/devices
  • MODFET's
  • Monolithic integrated circuits
  • Optical receivers
  • Optoelectronic devices

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Atomic and Molecular Physics, and Optics
  • Physics and Astronomy (miscellaneous)

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