46.5-GHz-bandwidth monolithic receiver OEIC consisting of a waveguide p-i-n photodiode and a HEMT distributed amplifier

K. Takahata; Y. Muramoto; Hideki Fukano; K. Kato; A. Kozen; O. Nakajima; Y. Matsuoka

doi:10.1109/68.701532

46.5-GHz-bandwidth monolithic receiver OEIC consisting of a waveguide p-i-n photodiode and a HEMT distributed amplifier

K. Takahata, Y. Muramoto, Hideki Fukano, K. Kato, A. Kozen, O. Nakajima, Y. Matsuoka

Research output: Contribution to journal › Article

17 Citations (Scopus)

Abstract

A large bandwidth monolithically integrated photoreceiver for 1.55-μm wavelength operation was fabricated using a stacked structure of waveguide p-i-n photodiode layers and InAlAs-InGaAs high-electron mobility transistor (HEMT) layers grown using a single-step metal-organic vapor-phase epitaxy. The monolithic receiver optoelectronic integrated circuit (OEIC) consists of a waveguide p-i-n photodiode with a high responsivity of 0.5 A/W and a HEMT distributed amplifier. It has a bandwidth of 46.5 GHz, which is the largest yet reported for a long-wavelength receiver OEIC, and exhibits a clear eye opening at 40 Gb/s. This excellent performance is very attractive for use in high-speed optical transmission systems and millimeter-wave fiber-radio systems.

Original language	English
Pages (from-to)	1150-1152
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	10
Issue number	8
DOIs	https://doi.org/10.1109/68.701532
Publication status	Published - Aug 1998
Externally published	Yes

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Keywords

Distributed amplifiers
High-speed circuits/devices
MODFET's
Monolithic integrated circuits
Optical receivers
Optoelectronic devices

ASJC Scopus subject areas

Electrical and Electronic Engineering
Atomic and Molecular Physics, and Optics
Physics and Astronomy (miscellaneous)

Cite this

Takahata, K., Muramoto, Y., Fukano, H., Kato, K., Kozen, A., Nakajima, O., & Matsuoka, Y. (1998). 46.5-GHz-bandwidth monolithic receiver OEIC consisting of a waveguide p-i-n photodiode and a HEMT distributed amplifier. IEEE Photonics Technology Letters, 10(8), 1150-1152. https://doi.org/10.1109/68.701532

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AU - Takahata, K.

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AU - Fukano, Hideki

AU - Kato, K.

AU - Kozen, A.

AU - Nakajima, O.

AU - Matsuoka, Y.

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AB - A large bandwidth monolithically integrated photoreceiver for 1.55-μm wavelength operation was fabricated using a stacked structure of waveguide p-i-n photodiode layers and InAlAs-InGaAs high-electron mobility transistor (HEMT) layers grown using a single-step metal-organic vapor-phase epitaxy. The monolithic receiver optoelectronic integrated circuit (OEIC) consists of a waveguide p-i-n photodiode with a high responsivity of 0.5 A/W and a HEMT distributed amplifier. It has a bandwidth of 46.5 GHz, which is the largest yet reported for a long-wavelength receiver OEIC, and exhibits a clear eye opening at 40 Gb/s. This excellent performance is very attractive for use in high-speed optical transmission systems and millimeter-wave fiber-radio systems.

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Access to Document

10.1109/68.701532