46.5-GHz-bandwidth monolithic receiver OEIC consisting of a waveguide p-i-n photodiode and a HEMT distributed amplifier

K. Takahata; Y. Muramoto; H. Fukano; K. Kato; A. Kozen; O. Nakajima; Y. Matsuoka

doi:10.1109/68.701532

46.5-GHz-bandwidth monolithic receiver OEIC consisting of a waveguide p-i-n photodiode and a HEMT distributed amplifier

K. Takahata, Y. Muramoto, H. Fukano, K. Kato, A. Kozen, O. Nakajima, Y. Matsuoka

Research output: Contribution to journal › Article › peer-review

17 Citations (Scopus)

Abstract

A large bandwidth monolithically integrated photoreceiver for 1.55-μm wavelength operation was fabricated using a stacked structure of waveguide p-i-n photodiode layers and InAlAs-InGaAs high-electron mobility transistor (HEMT) layers grown using a single-step metal-organic vapor-phase epitaxy. The monolithic receiver optoelectronic integrated circuit (OEIC) consists of a waveguide p-i-n photodiode with a high responsivity of 0.5 A/W and a HEMT distributed amplifier. It has a bandwidth of 46.5 GHz, which is the largest yet reported for a long-wavelength receiver OEIC, and exhibits a clear eye opening at 40 Gb/s. This excellent performance is very attractive for use in high-speed optical transmission systems and millimeter-wave fiber-radio systems.

Original language	English
Pages (from-to)	1150-1152
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	10
Issue number	8
DOIs	https://doi.org/10.1109/68.701532
Publication status	Published - Aug 1 1998
Externally published	Yes

Keywords

Distributed amplifiers
High-speed circuits/devices
MODFET's
Monolithic integrated circuits
Optical receivers
Optoelectronic devices

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

Access to Document

10.1109/68.701532

Cite this

@article{4f44a8669f6b49628fb574c8f0e49093,

title = "46.5-GHz-bandwidth monolithic receiver OEIC consisting of a waveguide p-i-n photodiode and a HEMT distributed amplifier",

abstract = "A large bandwidth monolithically integrated photoreceiver for 1.55-μm wavelength operation was fabricated using a stacked structure of waveguide p-i-n photodiode layers and InAlAs-InGaAs high-electron mobility transistor (HEMT) layers grown using a single-step metal-organic vapor-phase epitaxy. The monolithic receiver optoelectronic integrated circuit (OEIC) consists of a waveguide p-i-n photodiode with a high responsivity of 0.5 A/W and a HEMT distributed amplifier. It has a bandwidth of 46.5 GHz, which is the largest yet reported for a long-wavelength receiver OEIC, and exhibits a clear eye opening at 40 Gb/s. This excellent performance is very attractive for use in high-speed optical transmission systems and millimeter-wave fiber-radio systems.",

keywords = "Distributed amplifiers, High-speed circuits/devices, MODFET's, Monolithic integrated circuits, Optical receivers, Optoelectronic devices",

author = "K. Takahata and Y. Muramoto and H. Fukano and K. Kato and A. Kozen and O. Nakajima and Y. Matsuoka",

year = "1998",

month = aug,

day = "1",

doi = "10.1109/68.701532",

language = "English",

volume = "10",

pages = "1150--1152",

journal = "IEEE Photonics Technology Letters",

issn = "1041-1135",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "8",

}

TY - JOUR

T1 - 46.5-GHz-bandwidth monolithic receiver OEIC consisting of a waveguide p-i-n photodiode and a HEMT distributed amplifier

AU - Takahata, K.

AU - Muramoto, Y.

AU - Fukano, H.

AU - Kato, K.

AU - Kozen, A.

AU - Nakajima, O.

AU - Matsuoka, Y.

PY - 1998/8/1

Y1 - 1998/8/1

N2 - A large bandwidth monolithically integrated photoreceiver for 1.55-μm wavelength operation was fabricated using a stacked structure of waveguide p-i-n photodiode layers and InAlAs-InGaAs high-electron mobility transistor (HEMT) layers grown using a single-step metal-organic vapor-phase epitaxy. The monolithic receiver optoelectronic integrated circuit (OEIC) consists of a waveguide p-i-n photodiode with a high responsivity of 0.5 A/W and a HEMT distributed amplifier. It has a bandwidth of 46.5 GHz, which is the largest yet reported for a long-wavelength receiver OEIC, and exhibits a clear eye opening at 40 Gb/s. This excellent performance is very attractive for use in high-speed optical transmission systems and millimeter-wave fiber-radio systems.

AB - A large bandwidth monolithically integrated photoreceiver for 1.55-μm wavelength operation was fabricated using a stacked structure of waveguide p-i-n photodiode layers and InAlAs-InGaAs high-electron mobility transistor (HEMT) layers grown using a single-step metal-organic vapor-phase epitaxy. The monolithic receiver optoelectronic integrated circuit (OEIC) consists of a waveguide p-i-n photodiode with a high responsivity of 0.5 A/W and a HEMT distributed amplifier. It has a bandwidth of 46.5 GHz, which is the largest yet reported for a long-wavelength receiver OEIC, and exhibits a clear eye opening at 40 Gb/s. This excellent performance is very attractive for use in high-speed optical transmission systems and millimeter-wave fiber-radio systems.

KW - Distributed amplifiers

KW - High-speed circuits/devices

KW - MODFET's

KW - Monolithic integrated circuits

KW - Optical receivers

KW - Optoelectronic devices

UR - http://www.scopus.com/inward/record.url?scp=0032138888&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032138888&partnerID=8YFLogxK

U2 - 10.1109/68.701532

DO - 10.1109/68.701532

M3 - Article

AN - SCOPUS:0032138888

VL - 10

SP - 1150

EP - 1152

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

SN - 1041-1135

IS - 8

ER -

46.5-GHz-bandwidth monolithic receiver OEIC consisting of a waveguide p-i-n photodiode and a HEMT distributed amplifier

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this