40 Gbit/s electroabsorption modulators with 1.1 V driving voltage

Hideki Fukano, T. Yamanaka, M. Tamura, H. Nakajima, Y. Akage, Y. Kondo, T. Saitoh

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

40 Gbit/s electioabsorption modulators with an RF extinction ratio of 10 dB and driven by a peak-to-peak voltage as low as 1.1 V have been successfully fabricated. This low driving voltage is achieved by employing strain-compensated InGaAlAs/InAlAs multi-quantum-well layers with very good extinction characteristics and by optimising the number of wells and electroabsorption length.

Original languageEnglish
Pages (from-to)1144-1146
Number of pages3
JournalElectronics Letters
Volume40
Issue number18
DOIs
Publication statusPublished - Sep 2 2004
Externally publishedYes

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Electroabsorption modulators
Electric potential
Semiconductor quantum wells
Modulators

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Fukano, H., Yamanaka, T., Tamura, M., Nakajima, H., Akage, Y., Kondo, Y., & Saitoh, T. (2004). 40 Gbit/s electroabsorption modulators with 1.1 V driving voltage. Electronics Letters, 40(18), 1144-1146. https://doi.org/10.1049/el:20045968

40 Gbit/s electroabsorption modulators with 1.1 V driving voltage. / Fukano, Hideki; Yamanaka, T.; Tamura, M.; Nakajima, H.; Akage, Y.; Kondo, Y.; Saitoh, T.

In: Electronics Letters, Vol. 40, No. 18, 02.09.2004, p. 1144-1146.

Research output: Contribution to journalArticle

Fukano, H, Yamanaka, T, Tamura, M, Nakajima, H, Akage, Y, Kondo, Y & Saitoh, T 2004, '40 Gbit/s electroabsorption modulators with 1.1 V driving voltage', Electronics Letters, vol. 40, no. 18, pp. 1144-1146. https://doi.org/10.1049/el:20045968
Fukano H, Yamanaka T, Tamura M, Nakajima H, Akage Y, Kondo Y et al. 40 Gbit/s electroabsorption modulators with 1.1 V driving voltage. Electronics Letters. 2004 Sep 2;40(18):1144-1146. https://doi.org/10.1049/el:20045968
Fukano, Hideki ; Yamanaka, T. ; Tamura, M. ; Nakajima, H. ; Akage, Y. ; Kondo, Y. ; Saitoh, T. / 40 Gbit/s electroabsorption modulators with 1.1 V driving voltage. In: Electronics Letters. 2004 ; Vol. 40, No. 18. pp. 1144-1146.
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