40 Gbit/s electroabsorption modulators with 1.1 V driving voltage

H. Fukano, T. Yamanaka, M. Tamura, H. Nakajima, Y. Akage, Y. Kondo, T. Saitoh

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Abstract

40 Gbit/s electioabsorption modulators with an RF extinction ratio of 10 dB and driven by a peak-to-peak voltage as low as 1.1 V have been successfully fabricated. This low driving voltage is achieved by employing strain-compensated InGaAlAs/InAlAs multi-quantum-well layers with very good extinction characteristics and by optimising the number of wells and electroabsorption length.

Original languageEnglish
Pages (from-to)1144-1146
Number of pages3
JournalElectronics Letters
Volume40
Issue number18
DOIs
Publication statusPublished - Sep 2 2004
Externally publishedYes

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ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Fukano, H., Yamanaka, T., Tamura, M., Nakajima, H., Akage, Y., Kondo, Y., & Saitoh, T. (2004). 40 Gbit/s electroabsorption modulators with 1.1 V driving voltage. Electronics Letters, 40(18), 1144-1146. https://doi.org/10.1049/el:20045968