2.4m cutoff wavelength heterojunction phototransistor with strained InAs/InGaAs MQW absorption layer

H. Fukano; T. Sato; M. Mitsuhara; Y. Kondo; H. Yasaka

doi:10.1049/el:20079759

2.4m cutoff wavelength heterojunction phototransistor with strained InAs/InGaAs MQW absorption layer

H. Fukano, T. Sato, M. Mitsuhara, Y. Kondo, H. Yasaka

Research output: Contribution to journal › Article

2 Citations (Scopus)

Abstract

A novel mid-infrared photodetector has been developed that consists of an InP/InGaAs heterojunction phototransistor with a strained InAs/InGaAs multi-quantum well (MQW) absorption layer inserted in the low electric field region of the collector. The thick strained InAs well enhances the quantum confined effect. This provides a high absorption coefficient at a wavelength of 2.3m. The photocurrent generated in the MQW absorption layer is amplified by the current gain, resulting in a high responsivity of more than 10A/W. In addition, the small volume of the MQW in the low electric field region provides a low dark current.

Original language	English
Pages (from-to)	1306-1308
Number of pages	3
Journal	Electronics Letters
Volume	43
Issue number	23
DOIs	https://doi.org/10.1049/el:20079759
Publication status	Published - Jan 1 2007
Externally published	Yes

Fingerprint

ASJC Scopus subject areas

Electrical and Electronic Engineering

Cite this

Fukano, H., Sato, T., Mitsuhara, M., Kondo, Y., & Yasaka, H. (2007). 2.4m cutoff wavelength heterojunction phototransistor with strained InAs/InGaAs MQW absorption layer. Electronics Letters, 43(23), 1306-1308. https://doi.org/10.1049/el:20079759

@article{9c8a04e903b142bbb0688ba1643b3f31,

title = "2.4m cutoff wavelength heterojunction phototransistor with strained InAs/InGaAs MQW absorption layer",

abstract = "A novel mid-infrared photodetector has been developed that consists of an InP/InGaAs heterojunction phototransistor with a strained InAs/InGaAs multi-quantum well (MQW) absorption layer inserted in the low electric field region of the collector. The thick strained InAs well enhances the quantum confined effect. This provides a high absorption coefficient at a wavelength of 2.3m. The photocurrent generated in the MQW absorption layer is amplified by the current gain, resulting in a high responsivity of more than 10A/W. In addition, the small volume of the MQW in the low electric field region provides a low dark current.",

author = "H. Fukano and T. Sato and M. Mitsuhara and Y. Kondo and H. Yasaka",

year = "2007",

month = jan

day = "1",

doi = "10.1049/el:20079759",

language = "English",

volume = "43",

pages = "1306--1308",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "Institution of Engineering and Technology",

number = "23",

}

TY - JOUR

T1 - 2.4m cutoff wavelength heterojunction phototransistor with strained InAs/InGaAs MQW absorption layer

AU - Fukano, H.

AU - Sato, T.

AU - Mitsuhara, M.

AU - Kondo, Y.

AU - Yasaka, H.

PY - 2007/1/1

Y1 - 2007/1/1

N2 - A novel mid-infrared photodetector has been developed that consists of an InP/InGaAs heterojunction phototransistor with a strained InAs/InGaAs multi-quantum well (MQW) absorption layer inserted in the low electric field region of the collector. The thick strained InAs well enhances the quantum confined effect. This provides a high absorption coefficient at a wavelength of 2.3m. The photocurrent generated in the MQW absorption layer is amplified by the current gain, resulting in a high responsivity of more than 10A/W. In addition, the small volume of the MQW in the low electric field region provides a low dark current.

AB - A novel mid-infrared photodetector has been developed that consists of an InP/InGaAs heterojunction phototransistor with a strained InAs/InGaAs multi-quantum well (MQW) absorption layer inserted in the low electric field region of the collector. The thick strained InAs well enhances the quantum confined effect. This provides a high absorption coefficient at a wavelength of 2.3m. The photocurrent generated in the MQW absorption layer is amplified by the current gain, resulting in a high responsivity of more than 10A/W. In addition, the small volume of the MQW in the low electric field region provides a low dark current.

UR - http://www.scopus.com/inward/record.url?scp=36048973589&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=36048973589&partnerID=8YFLogxK

U2 - 10.1049/el:20079759

DO - 10.1049/el:20079759

M3 - Article

AN - SCOPUS:36048973589

VL - 43

SP - 1306

EP - 1308

JO - Electronics Letters

JF - Electronics Letters

SN - 0013-5194

IS - 23

ER -

Access to Document

10.1049/el:20079759