2.4m cutoff wavelength heterojunction phototransistor with strained InAs/InGaAs MQW absorption layer

Hideki Fukano, T. Sato, M. Mitsuhara, Y. Kondo, H. Yasaka

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

A novel mid-infrared photodetector has been developed that consists of an InP/InGaAs heterojunction phototransistor with a strained InAs/InGaAs multi-quantum well (MQW) absorption layer inserted in the low electric field region of the collector. The thick strained InAs well enhances the quantum confined effect. This provides a high absorption coefficient at a wavelength of 2.3m. The photocurrent generated in the MQW absorption layer is amplified by the current gain, resulting in a high responsivity of more than 10A/W. In addition, the small volume of the MQW in the low electric field region provides a low dark current.

Original languageEnglish
Pages (from-to)1306-1308
Number of pages3
JournalElectronics Letters
Volume43
Issue number23
DOIs
Publication statusPublished - 2007
Externally publishedYes

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Phototransistors
Semiconductor quantum wells
Heterojunctions
Wavelength
Electric fields
Dark currents
Photodetectors
Photocurrents
Infrared radiation

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

2.4m cutoff wavelength heterojunction phototransistor with strained InAs/InGaAs MQW absorption layer. / Fukano, Hideki; Sato, T.; Mitsuhara, M.; Kondo, Y.; Yasaka, H.

In: Electronics Letters, Vol. 43, No. 23, 2007, p. 1306-1308.

Research output: Contribution to journalArticle

Fukano, Hideki ; Sato, T. ; Mitsuhara, M. ; Kondo, Y. ; Yasaka, H. / 2.4m cutoff wavelength heterojunction phototransistor with strained InAs/InGaAs MQW absorption layer. In: Electronics Letters. 2007 ; Vol. 43, No. 23. pp. 1306-1308.
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