Abstract
A novel mid-infrared photodetector has been developed that consists of an InP/InGaAs heterojunction phototransistor with a strained InAs/InGaAs multi-quantum well (MQW) absorption layer inserted in the low electric field region of the collector. The thick strained InAs well enhances the quantum confined effect. This provides a high absorption coefficient at a wavelength of 2.3m. The photocurrent generated in the MQW absorption layer is amplified by the current gain, resulting in a high responsivity of more than 10A/W. In addition, the small volume of the MQW in the low electric field region provides a low dark current.
| Original language | English |
|---|---|
| Pages (from-to) | 1306-1308 |
| Number of pages | 3 |
| Journal | Electronics Letters |
| Volume | 43 |
| Issue number | 23 |
| DOIs | |
| Publication status | Published - Jan 1 2007 |
| Externally published | Yes |
ASJC Scopus subject areas
- Electrical and Electronic Engineering
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Fukano, H., Sato, T., Mitsuhara, M., Kondo, Y., & Yasaka, H. (2007). 2.4m cutoff wavelength heterojunction phototransistor with strained InAs/InGaAs MQW absorption layer. Electronics Letters, 43(23), 1306-1308. https://doi.org/10.1049/el:20079759