2.4m cutoff wavelength heterojunction phototransistor with strained InAs/InGaAs MQW absorption layer

H. Fukano; T. Sato; M. Mitsuhara; Y. Kondo; H. Yasaka

doi:10.1049/el:20079759

2.4m cutoff wavelength heterojunction phototransistor with strained InAs/InGaAs MQW absorption layer

H. Fukano, T. Sato, M. Mitsuhara, Y. Kondo, H. Yasaka

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

A novel mid-infrared photodetector has been developed that consists of an InP/InGaAs heterojunction phototransistor with a strained InAs/InGaAs multi-quantum well (MQW) absorption layer inserted in the low electric field region of the collector. The thick strained InAs well enhances the quantum confined effect. This provides a high absorption coefficient at a wavelength of 2.3m. The photocurrent generated in the MQW absorption layer is amplified by the current gain, resulting in a high responsivity of more than 10A/W. In addition, the small volume of the MQW in the low electric field region provides a low dark current.

Original language	English
Pages (from-to)	1306-1308
Number of pages	3
Journal	Electronics Letters
Volume	43
Issue number	23
DOIs	https://doi.org/10.1049/el:20079759
Publication status	Published - Jan 1 2007
Externally published	Yes

ASJC Scopus subject areas

Electrical and Electronic Engineering

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title = "2.4m cutoff wavelength heterojunction phototransistor with strained InAs/InGaAs MQW absorption layer",

abstract = "A novel mid-infrared photodetector has been developed that consists of an InP/InGaAs heterojunction phototransistor with a strained InAs/InGaAs multi-quantum well (MQW) absorption layer inserted in the low electric field region of the collector. The thick strained InAs well enhances the quantum confined effect. This provides a high absorption coefficient at a wavelength of 2.3m. The photocurrent generated in the MQW absorption layer is amplified by the current gain, resulting in a high responsivity of more than 10A/W. In addition, the small volume of the MQW in the low electric field region provides a low dark current.",

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AU - Fukano, H.

AU - Sato, T.

AU - Mitsuhara, M.

AU - Kondo, Y.

AU - Yasaka, H.

PY - 2007/1/1

Y1 - 2007/1/1

N2 - A novel mid-infrared photodetector has been developed that consists of an InP/InGaAs heterojunction phototransistor with a strained InAs/InGaAs multi-quantum well (MQW) absorption layer inserted in the low electric field region of the collector. The thick strained InAs well enhances the quantum confined effect. This provides a high absorption coefficient at a wavelength of 2.3m. The photocurrent generated in the MQW absorption layer is amplified by the current gain, resulting in a high responsivity of more than 10A/W. In addition, the small volume of the MQW in the low electric field region provides a low dark current.

AB - A novel mid-infrared photodetector has been developed that consists of an InP/InGaAs heterojunction phototransistor with a strained InAs/InGaAs multi-quantum well (MQW) absorption layer inserted in the low electric field region of the collector. The thick strained InAs well enhances the quantum confined effect. This provides a high absorption coefficient at a wavelength of 2.3m. The photocurrent generated in the MQW absorption layer is amplified by the current gain, resulting in a high responsivity of more than 10A/W. In addition, the small volume of the MQW in the low electric field region provides a low dark current.

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JF - Electronics Letters

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2.4m cutoff wavelength heterojunction phototransistor with strained InAs/InGaAs MQW absorption layer

Abstract

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