Abstract
A novel mid-infrared photodetector has been developed that consists of an InP/InGaAs heterojunction phototransistor with a strained InAs/InGaAs multi-quantum well (MQW) absorption layer inserted in the low electric field region of the collector. The thick strained InAs well enhances the quantum confined effect. This provides a high absorption coefficient at a wavelength of 2.3m. The photocurrent generated in the MQW absorption layer is amplified by the current gain, resulting in a high responsivity of more than 10A/W. In addition, the small volume of the MQW in the low electric field region provides a low dark current.
| Original language | English |
|---|---|
| Pages (from-to) | 1306-1308 |
| Number of pages | 3 |
| Journal | Electronics Letters |
| Volume | 43 |
| Issue number | 23 |
| DOIs | |
| Publication status | Published - 2007 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Electrical and Electronic Engineering
Cite this
2.4m cutoff wavelength heterojunction phototransistor with strained InAs/InGaAs MQW absorption layer. / Fukano, Hideki; Sato, T.; Mitsuhara, M.; Kondo, Y.; Yasaka, H.
In: Electronics Letters, Vol. 43, No. 23, 2007, p. 1306-1308.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - 2.4m cutoff wavelength heterojunction phototransistor with strained InAs/InGaAs MQW absorption layer
AU - Fukano, Hideki
AU - Sato, T.
AU - Mitsuhara, M.
AU - Kondo, Y.
AU - Yasaka, H.
PY - 2007
Y1 - 2007
N2 - A novel mid-infrared photodetector has been developed that consists of an InP/InGaAs heterojunction phototransistor with a strained InAs/InGaAs multi-quantum well (MQW) absorption layer inserted in the low electric field region of the collector. The thick strained InAs well enhances the quantum confined effect. This provides a high absorption coefficient at a wavelength of 2.3m. The photocurrent generated in the MQW absorption layer is amplified by the current gain, resulting in a high responsivity of more than 10A/W. In addition, the small volume of the MQW in the low electric field region provides a low dark current.
AB - A novel mid-infrared photodetector has been developed that consists of an InP/InGaAs heterojunction phototransistor with a strained InAs/InGaAs multi-quantum well (MQW) absorption layer inserted in the low electric field region of the collector. The thick strained InAs well enhances the quantum confined effect. This provides a high absorption coefficient at a wavelength of 2.3m. The photocurrent generated in the MQW absorption layer is amplified by the current gain, resulting in a high responsivity of more than 10A/W. In addition, the small volume of the MQW in the low electric field region provides a low dark current.
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UR - http://www.scopus.com/inward/citedby.url?scp=36048973589&partnerID=8YFLogxK
U2 - 10.1049/el:20079759
DO - 10.1049/el:20079759
M3 - Article
VL - 43
SP - 1306
EP - 1308
JO - Electronics Letters
JF - Electronics Letters
SN - 0013-5194
IS - 23
ER -