20 Gbit/s monolithic photoreceiver consisting of a waveguide pin photodiode and HEMT distributed amplifier

K. Takahata, Y. Muramoto, H. Fukano, K. Kato, A. Kozen, O. Nakajima, S. Kimura, Y. Imai

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

A monolithic photoreceiver OEIC for λ = 1.55μm consisting of a waveguide pin photodiode and an InAlAs/InGaAs HEMT distributed amplifier has been fabricated using a single-step MOVPE growth technique. It has a 3dB-down frequency of 20GHz and operates at 20Gbit/s with a sensitivity of-10.4dBm.

Original languageEnglish
Pages (from-to)1576-1577
Number of pages2
JournalElectronics Letters
Volume33
Issue number18
DOIs
Publication statusPublished - Aug 28 1997
Externally publishedYes

Keywords

  • Integrated optoelectronics
  • Optical receivers

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of '20 Gbit/s monolithic photoreceiver consisting of a waveguide pin photodiode and HEMT distributed amplifier'. Together they form a unique fingerprint.

Cite this