1.5μm InGaAlAs-strained MQW ridge-waveguide laser diodes with hot-carrier injection suppression structure

Hideki Fukano, Y. Noguchi, S. Kondo

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

The authors have developed a ridge-waveguide laser diode (LD) with a layer structure which suppresses hot-carrier injection into separate confinement heterostructure layers as well as effectively confining carriers in the multiquantum well layers. Fabricated LDs show low threshold currents and improved temperature characteristics due to a decrease in the leakage current outside the ridge-waveguide caused by reduced carrier diffusion length.

Original languageEnglish
Pages (from-to)41-43
Number of pages3
JournalElectronics Letters
Volume35
Issue number1
Publication statusPublished - Jan 7 1999
Externally publishedYes

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Ridge waveguides
Hot carriers
Semiconductor lasers
Leakage currents
Heterojunctions
Temperature

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

1.5μm InGaAlAs-strained MQW ridge-waveguide laser diodes with hot-carrier injection suppression structure. / Fukano, Hideki; Noguchi, Y.; Kondo, S.

In: Electronics Letters, Vol. 35, No. 1, 07.01.1999, p. 41-43.

Research output: Contribution to journalArticle

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