Abstract
I. 3μm large spot-size laser diodes (LDs) with a laterally tapered active layer have been fabricated with a conventional buried heterostructure laser process. Fabricated LDs with a cavity length as short as 225 μm show singlemode-fibre coupling losses of < 3dB, threshold currents of 4.7 and 18.0mA, and efficiencies of 0.54 and 0.37 W/A at 25 and 85°C, respectively.
| Original language | English |
|---|---|
| Pages (from-to) | 1439-1440 |
| Number of pages | 2 |
| Journal | Electronics Letters |
| Volume | 31 |
| Issue number | 17 |
| DOIs | |
| Publication status | Published - Aug 17 1995 |
| Externally published | Yes |
Keywords
- Optical couplers
- Semiconductor junction lasers
ASJC Scopus subject areas
- Electrical and Electronic Engineering
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Fukano, H., Kadota, Y., Kondo, Y., & Ueki, M. (1995). 1.3 μm large spot-size laser diodes with laterallytapered active layer. Electronics Letters, 31(17), 1439-1440. https://doi.org/10.1049/el:19950965