1.3 μm large spot-size laser diodes with laterallytapered active layer

H. Fukano, Y. Kadota, Y. Kondo, M. Ueki

Research output: Contribution to journalArticlepeer-review

20 Citations (Scopus)

Abstract

I. 3μm large spot-size laser diodes (LDs) with a laterally tapered active layer have been fabricated with a conventional buried heterostructure laser process. Fabricated LDs with a cavity length as short as 225 μm show singlemode-fibre coupling losses of < 3dB, threshold currents of 4.7 and 18.0mA, and efficiencies of 0.54 and 0.37 W/A at 25 and 85°C, respectively.

Original languageEnglish
Pages (from-to)1439-1440
Number of pages2
JournalElectronics Letters
Volume31
Issue number17
DOIs
Publication statusPublished - Aug 17 1995
Externally publishedYes

Keywords

  • Optical couplers
  • Semiconductor junction lasers

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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