1.3 μm large spot-size laser diodes with laterallytapered active layer

H. Fukano; Y. Kadota; Y. Kondo; M. Ueki

doi:10.1049/el:19950965

1.3 μm large spot-size laser diodes with laterallytapered active layer

H. Fukano, Y. Kadota, Y. Kondo, M. Ueki

Research output: Contribution to journal › Article › peer-review

20 Citations (Scopus)

Abstract

I. 3μm large spot-size laser diodes (LDs) with a laterally tapered active layer have been fabricated with a conventional buried heterostructure laser process. Fabricated LDs with a cavity length as short as 225 μm show singlemode-fibre coupling losses of < 3dB, threshold currents of 4.7 and 18.0mA, and efficiencies of 0.54 and 0.37 W/A at 25 and 85°C, respectively.

Original language	English
Pages (from-to)	1439-1440
Number of pages	2
Journal	Electronics Letters
Volume	31
Issue number	17
DOIs	https://doi.org/10.1049/el:19950965
Publication status	Published - Aug 17 1995
Externally published	Yes

Keywords

Optical couplers
Semiconductor junction lasers

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.1049/el:19950965

Cite this

@article{1afba45cb6fd4483b67915018fc5eab2,

title = "1.3 μm large spot-size laser diodes with laterallytapered active layer",

abstract = "I. 3μm large spot-size laser diodes (LDs) with a laterally tapered active layer have been fabricated with a conventional buried heterostructure laser process. Fabricated LDs with a cavity length as short as 225 μm show singlemode-fibre coupling losses of < 3dB, threshold currents of 4.7 and 18.0mA, and efficiencies of 0.54 and 0.37 W/A at 25 and 85°C, respectively.",

keywords = "Optical couplers, Semiconductor junction lasers",

author = "H. Fukano and Y. Kadota and Y. Kondo and M. Ueki",

year = "1995",

month = aug,

day = "17",

doi = "10.1049/el:19950965",

language = "English",

volume = "31",

pages = "1439--1440",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "Institution of Engineering and Technology",

number = "17",

}

TY - JOUR

T1 - 1.3 μm large spot-size laser diodes with laterallytapered active layer

AU - Fukano, H.

AU - Kadota, Y.

AU - Kondo, Y.

AU - Ueki, M.

PY - 1995/8/17

Y1 - 1995/8/17

N2 - I. 3μm large spot-size laser diodes (LDs) with a laterally tapered active layer have been fabricated with a conventional buried heterostructure laser process. Fabricated LDs with a cavity length as short as 225 μm show singlemode-fibre coupling losses of < 3dB, threshold currents of 4.7 and 18.0mA, and efficiencies of 0.54 and 0.37 W/A at 25 and 85°C, respectively.

AB - I. 3μm large spot-size laser diodes (LDs) with a laterally tapered active layer have been fabricated with a conventional buried heterostructure laser process. Fabricated LDs with a cavity length as short as 225 μm show singlemode-fibre coupling losses of < 3dB, threshold currents of 4.7 and 18.0mA, and efficiencies of 0.54 and 0.37 W/A at 25 and 85°C, respectively.

KW - Optical couplers

KW - Semiconductor junction lasers

UR - http://www.scopus.com/inward/record.url?scp=0029354455&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0029354455&partnerID=8YFLogxK

U2 - 10.1049/el:19950965

DO - 10.1049/el:19950965

M3 - Article

AN - SCOPUS:0029354455

VL - 31

SP - 1439

EP - 1440

JO - Electronics Letters

JF - Electronics Letters

SN - 0013-5194

IS - 17

ER -

1.3 μm large spot-size laser diodes with laterallytapered active layer

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this