1.3μm large spot-size laser diodes with laterally tapered active layer

Hideki Fukano, Y. Kadota, Y. Kondo, M. Ueki, Y. Sakai, K. Kasaya, K. Yokoyama, Y. Tohmori

Research output: Contribution to journalArticle

20 Citations (Scopus)

Abstract

1.3μm large spot-size laser diodes (LDs) with a laterally tapered active layer have been fabricated with a conventional buried heterostructure laser process. Fabricated LDs with a cavity length as short as 225μm show singlemode-fibre coupling losses of <3dB, threshold current of 4.7 and 18.0mA, and efficiencies of 0.54 and 0.37W/A at 25 and 85°C, respectively.

Original languageEnglish
Pages (from-to)1439-1440
Number of pages2
JournalElectronics Letters
Volume31
Issue number17
DOIs
Publication statusPublished - Jan 1 1995
Externally publishedYes

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Semiconductor lasers
Heterojunctions
Fibers
Lasers

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Fukano, H., Kadota, Y., Kondo, Y., Ueki, M., Sakai, Y., Kasaya, K., ... Tohmori, Y. (1995). 1.3μm large spot-size laser diodes with laterally tapered active layer. Electronics Letters, 31(17), 1439-1440. https://doi.org/10.1049/el:19950965

1.3μm large spot-size laser diodes with laterally tapered active layer. / Fukano, Hideki; Kadota, Y.; Kondo, Y.; Ueki, M.; Sakai, Y.; Kasaya, K.; Yokoyama, K.; Tohmori, Y.

In: Electronics Letters, Vol. 31, No. 17, 01.01.1995, p. 1439-1440.

Research output: Contribution to journalArticle

Fukano, H, Kadota, Y, Kondo, Y, Ueki, M, Sakai, Y, Kasaya, K, Yokoyama, K & Tohmori, Y 1995, '1.3μm large spot-size laser diodes with laterally tapered active layer', Electronics Letters, vol. 31, no. 17, pp. 1439-1440. https://doi.org/10.1049/el:19950965
Fukano, Hideki ; Kadota, Y. ; Kondo, Y. ; Ueki, M. ; Sakai, Y. ; Kasaya, K. ; Yokoyama, K. ; Tohmori, Y. / 1.3μm large spot-size laser diodes with laterally tapered active layer. In: Electronics Letters. 1995 ; Vol. 31, No. 17. pp. 1439-1440.
@article{1afba45cb6fd4483b67915018fc5eab2,
title = "1.3μm large spot-size laser diodes with laterally tapered active layer",
abstract = "1.3μm large spot-size laser diodes (LDs) with a laterally tapered active layer have been fabricated with a conventional buried heterostructure laser process. Fabricated LDs with a cavity length as short as 225μm show singlemode-fibre coupling losses of <3dB, threshold current of 4.7 and 18.0mA, and efficiencies of 0.54 and 0.37W/A at 25 and 85°C, respectively.",
author = "Hideki Fukano and Y. Kadota and Y. Kondo and M. Ueki and Y. Sakai and K. Kasaya and K. Yokoyama and Y. Tohmori",
year = "1995",
month = "1",
day = "1",
doi = "10.1049/el:19950965",
language = "English",
volume = "31",
pages = "1439--1440",
journal = "Electronics Letters",
issn = "0013-5194",
publisher = "Institution of Engineering and Technology",
number = "17",

}

TY - JOUR

T1 - 1.3μm large spot-size laser diodes with laterally tapered active layer

AU - Fukano, Hideki

AU - Kadota, Y.

AU - Kondo, Y.

AU - Ueki, M.

AU - Sakai, Y.

AU - Kasaya, K.

AU - Yokoyama, K.

AU - Tohmori, Y.

PY - 1995/1/1

Y1 - 1995/1/1

N2 - 1.3μm large spot-size laser diodes (LDs) with a laterally tapered active layer have been fabricated with a conventional buried heterostructure laser process. Fabricated LDs with a cavity length as short as 225μm show singlemode-fibre coupling losses of <3dB, threshold current of 4.7 and 18.0mA, and efficiencies of 0.54 and 0.37W/A at 25 and 85°C, respectively.

AB - 1.3μm large spot-size laser diodes (LDs) with a laterally tapered active layer have been fabricated with a conventional buried heterostructure laser process. Fabricated LDs with a cavity length as short as 225μm show singlemode-fibre coupling losses of <3dB, threshold current of 4.7 and 18.0mA, and efficiencies of 0.54 and 0.37W/A at 25 and 85°C, respectively.

UR - http://www.scopus.com/inward/record.url?scp=0029354455&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0029354455&partnerID=8YFLogxK

U2 - 10.1049/el:19950965

DO - 10.1049/el:19950965

M3 - Article

VL - 31

SP - 1439

EP - 1440

JO - Electronics Letters

JF - Electronics Letters

SN - 0013-5194

IS - 17

ER -